, lj nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 (973) 376-8960 insulated gate bipolar transistor IRG4PC40S standard speed igbt features ? standard: optimized for minimum saturation voltage and low operating frequencies ( < 1khz) ? generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 ? industry standard to-247ac package n-channel vces = 600v vce(on)typ. = 1.32v @vge = 15v, ic = 31a benefits ? generation 4 igbt's offer highest efficiency available ? igbt's optimized for specified application conditions ? designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbt's absolute maximum ratings to-247ac vces lc @ tc = 25c ic@tc = iooc icm ilm vge earv pd @ tc = 25c pd@tc = iooc tj tstg parameter collector-to-emitter breakdown voltage continuous collector current continuous collector current pulsed collector current ? clamped inductive load current ? gate-to-emitter voltage reverse voltage avalanche energy ? maximum power dissipation maximum power dissipation operating junction and storage temperature range soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw. max. 600 60 31 120 120 20 15 160 65 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 ibf-in (1.1n-m) units v a v mj w c thermal resistance rejc recs riua wt parameter junction-to-case case-to-sink, flat, greased surface junction-to-ambient, typical socket mount weight typ. ? 0.24 6 (0.21) max. 0.77 40 units c/w g (oz) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRG4PC40S electrical characteristics @ tj = 25c (unless otherwise specified) v(br)ces v(br)ecs av(br)ces/atj vce(on) vge(th) avge(th/atj 9fe brs bes parameter collector-to-emitter breakdown voltage emitter-to-collector breakdown voltage ? temperature coeff. of breakdown voltage collector-to-emitter saturation voltage gate threshold voltage temperature coeff. of threshold voltage forward transconductance ? zero gate voltage collector current gate-to-emitter leakage current win. 600 18 ? ? ? _ 3.0 12 ? ? ? typ. ? ? 0.75 1.32 1.68 1.32 ? -9.3 21 ? ? ? ? max. ? ? ? 1.5 ? ? 6.0 ? 250 2.0 1000 100 units v v v/c v mv/c s ma na conditions vge = 0v, lc = 250ma vge=ov, ic = 1.0a vge = ov, lc = 1.0ma ic = 31a vge = 15v lc = 60a see fig. 2, 5 lc = 31a,tj = 150c vce=vge, ic = 250ma vce = vge, lc = 250ua vce= 100v, ic = 31a vge = 0v, vce = 600v vge = 0v, vce = 10v, tj = 25c vge = 0v, vce = 600v, tj = 150c vge = 20v switching characteristics @ tj = 25c (unless otherwise specified) qa qge qgc td(on) tr td(off) tf ecn eoff els td(on) tr td(off) tf ets le qes coes cres parameter total gate charge (turn-on) gate - emitter charge (turn-on) gate - collector charge (turn-on) turn-on delay time rise time turn-off delay time fall time turn-on switching loss turn-off switching loss total switching loss turn-on delay time rise time turn-off delay time falltime total switching loss internal emitter inductance input capacitance output capacitance reverse transfer capacitance min. ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? typ. 100 14 34 22 18 650 380 0.45 6.5 6.95 23 21 1000 940 12 13 2200 140 26 max. 150 21 51 ? ? 980 570 ? ? 9.9 ? ? ? ? ? ? ? ? ? units nc ns mj ns mj nh pf conditions lc = 31a vcc = 400v see fig. 8 vge = 15v tj = 25c lc = 31 a, vcc = 480v vge = 15v, rg = 10j2 energy losses include "tail" see fig. 10, 11, 13, 14 tj = 150c, lc = 31 a, vcc = 480v vge = 15v, rg = 1012 energy losses include "tail" see fig. 13, 14 measured 5mm from package vge = 0v vcc = 30v see fig. 7 / = 1.0mhz notes: cd repetitive rating; vge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) @ vcc = 80%(vces), (see fig. 13a) = 20v, l = 10uh, rg = 10il, ? pulse width < 80us; duty factor < 0.1%. ? pulse width s.ous, single shot. g> repetitive rating; pulse width limited by maximum junction temperature.
IRG4PC40S case outline and dimensions ? to-247ac 5. 90 (.626 3.65 (.143) / v 3. 55 (.140) 15.30 (.602) eh / * 20.30 (.800) 19.70 (.775) 14.80 14.20 ?-.-. ii 1 (.583) (.559) : 2.40 (.094) 2.00 (.079)* 5.45 i 1w1 ' 2x i / -f -r ' ; 2 i j i - - -v a a 3 / -$-[00 25(.010)(m)|d -a-l i i i i 5. 50 (.217) | 1 5.50 (.217) 0 4.50 (.177) t ]j r^q i |_ 4.30 (.170) 3.70 (.145) 1.40 (.056) 1.00 (.039) |^- 1 0.25 (.010) ? |c|a?| 3.40 (.133) 3.00 (.118) 1-^-1 notes: b ?| -=-1 j ~ ? 530(209) 1 dimensions & tolerancing per ansi y14.5m, 1982. , ,,', jq, 2 controlling dimension : inch. -^ 2'50 (-08s 3 dimensions are shown millimeters (inches). /t to-247ac. lead assignments 1 -gate 2 -collector 4 -collector * longer leaded (20mm) version available (to-247ad) to order add ?-e'suffix to part number 0.80 (.031) jx 0.40 (.016) 2.60 (.102) 2.20 (.087) conforms to jedec outline to-247ac (to-3p) dimensions in millimeters and (inches)
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